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Country - Romania
Summary - Cr-42511 / Integrated Circuits And Transistors / Circuit Integrated And Transistors
Deadline - Jan 23, 2025
GT reference number - 101664596
Product classification - Construction work
Address - Romania
Contact details - 565656565
Tender notice no. - 76454545
GT Ref Id - 101664596
Document Type - Tender Notices
Description - Description: TRANSISTOR 2N3773, CENTRAL SEMICONDUCTOR / TRANSISTOR 2N3773, CENTRAL SEMICONDUCTOR - 5 PCS/EAFIELD EFFECT TRANSISTOR, SILICON N CHANNEL MOS TYPE, LEAKAGE CURRENT: IDSS=100UA (MAX) (VDS=600V), DRAIN CURRENT MAX. (DC) 12A, DRAIN POWER DIS SIPATION MAX (TC=25CEL) 150W, DRAIN-SOURCE RESISTANCE 0.5 OHM, TOSHIBA MODEL 2SK2699 / TRANSISTOR FIELD EFFECT, SILICON N CHANNEL MOS TYPE, LEAKAGE CURRENT: IDSS=100UA (MAX) (VDS=600V), DRAIN CURRENT MAX. (DC) 12A, DRAIN POWER DISSIPATION MAX. (TC=25CEL) 150W, DRAIN -SOURCE ON RESISTANCE 0.5 OHM, TOSHIBA MODEL 2SK2699 - 5 PCS/EAMOSFET TRANSISTOR WITH N-CHANNEL INDUCED, DRAIN-SOURCE VOLTAGE MAX. VDS=60V, DRAIN DC CURRENT MAX. ID=0.4A, POWER DISSIP
Gt Ref Id - 101664596
Deadline - Jan 23, 2025
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