Icp Etching System

  Address - Germany

  Contact details - 565656565

  Tender notice no. - 76454545

  GT Ref Id - 99965283

  Document Type - Tender Notices

Description - Description: A system for reactive ion etching using inductively coupled plasma (ICP-RIE) is being advertised. The system is to be a core part of the wafer processing infrastructure and will be installed in the clean room of the University of Paderbo rn. The development of wafer-scale components places great demands on the wafer size (up to 8"), the structure size and the structure homogeneity. The system should be able to etch as many different materials as possible in order to be able to produce a wide range of components. These include materials such as aluminum, chromium, lithium niobate, GaAs, silicon dioxide and silicon.local title:: ICP-ÄtzanlageContract Duration: : 10 DAYContract Typ

Gt Ref Id - 99965283

Deadline - Jan 16, 2025