Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.

Name: Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.
Start: 2024-12-04
End: 2025-01-09
Location: Friedrich-Schiller-Universitat Jena

Friedrich-Schiller-Universitat Jena Germany has Released a tender for Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc. in Chemicals. The tender was released on Dec 03, 2024.

Country - Germany

Summary - Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.

Deadline - Jan 09, 2025

GT reference number - 98961602

Product classification - Chemical products

Organization Details:

Address - Germany

Contact details - 565656565

Tender notice no. - 76454545

GT Ref Id - 98961602

Document Type - Tender Notices

Notice Details and Documents:

Description - notice_title: Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.local title:: ICP-RIE-Plasmaätzanlage für cryogenes Trockenätzen von Silizium, Siliziumdioxid u.ä.local description: : ICP-RIE-Plasmaätzanlage für cryogenes Trockenätzen von Silizium, Siliziumdioxid u.ä.

Gt Ref Id - 98961602

Deadline - Jan 09, 2025

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