Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.

  Address - Germany

  Contact details - 565656565

  Tender notice no. - 76454545

  GT Ref Id - 99052980

  Document Type - Tender Notices

Description - Description: The subject of the contract is an ICP-RIE plasma etching system for structuring micro- and nano-optical elements, specifically proportional and binary plasma etching in dielectric, semiconducting materials and functional layers (quartz g lass / fused silica, silicon, SiOxNy, silicon carbide, high-refractive materials such as Ta2O5, Nb2O5, etc.) using fluorine-based reactive gas processes, including at, but not exclusively, cryogenic temperatures of around -130°C. The system with loadlock (LL) must enable the processing of variable substrate sizes using a carrier without major processing and time expenditure. A quick, variable change of the substrate electrode cooling between coo

Gt Ref Id - 99052980

Deadline - Jan 09, 2025