Supply Of Low Temperature "Rpcvd" Epitaxis Equipment

  Address - France

  Contact details - 565656565

  Tender notice no. - 76454545

  GT Ref Id - 104580397

  Document Type - Tender Notices

Description - Description: For its research activities focused on the development of FD-SOI technologies of 10 Nm and beyond, CEA-LETI wishes to acquire epitaxy equipment in order to meet the technological challenges to come. This low-temperature epitaxy equipment of the RPCVD type ("Reduced Pressure Chemical Vapor Deposition" in English ") must be able to achieve growth by intrinsic epitaxy and doped in situ, non-selective and selective (types N and P) of group IV semiconductor, at high and low temperature (from 1100 ° C to 300 ° C) on 300 mm silicon brochures.The planned market includes the following compulsory costing options: - Option 1: engraving chamber for optimization of contact, as described in

Gt Ref Id - 104580397

Deadline - Apr 10, 2025